Dark and Illumination Electrical Characteristics of ZnS/Si Heterojunction Prepared by Pulsed Laser Deposition


In this work, zinc sulfide (ZnS) thin films were deposited on silicon substrates by pulsed-laser deposition (PLD) technique using Q-switched 532nm Nd:YAG laser with pulse repetition rate of 1 Hz. The electrical properties of the formed ZnS/Si heterojunction were investigated at different laser energies (700-1000mJ) and using 21 laser pulses for each sample. The current-voltage (I-V) characteristics of this heterojunction were observed in dark and under illumination and they showed photosensitive nature of this structure. The capacitance-voltage (C-V) measurements were performed to measure the built-in potential of the ZnS/Si heterojunction fabricated in this work.