Etch of Si-wafer using CF3Br plasma and KOH solution


In this study wet etching was used to etch Si-wafers by KOH solution at different concentrations .The results showed that decreasing of the etching rate at higher KOH concentration produces smooth surface. On the other hand ,it has been observed that the etching rate increases by using CF3Br plasma and lower KOH concentrations producing rough surface.


plasma, ething, Si, KOH, CF3Br