Effects of Number of Wells and Cavity Length in Limitation the Optimum Symmetric Multiple Quantum Well Laser

Abstract

In this research several main parameters/factors that effect on each ofstructures of semi-conductor lasers have been investigated. This investigationdepends mainly on two procedures : (1) A classification for these parametersincluding each of threshold current density, injecting threshold carrier density,absolute threshold current density and their relations with each of number ofwells and cavity length.(2) A simulation process for the previous parameterswith variable values of number of wells and cavity length. Non idealcontribution to the total output current like Auger recombination, Interfacerecombination and Leakage recombination have also been estimated through thesimulation process. In other words, this research is devoted to specify theoptimum performance of multi-quantum well structure of semi-conductor laser.The calculations were performed for a representative separate confinement(MQW) laser structure in GaAs/AlGaAs system of: 7.5nm as a QW size, 250nm as a thickness of the waveguide region and 8nm as a barrier size.