Measure of Thermoelectric Power of CdSe Thin Films that Prepared with Different Depositions Rate.


In this paper CdSe thin films have been prepared deposited on galas substrate by thermalevaporation technique at thickness 250 nm with different depositions rate ( 0.2,0.4,0.6,0.8,1,1.2) nm/sand substrate temperatures ( Ts) (300,373,423,473)K . Thermoelectric power were measured to thisfilms ,Seebak coefficient and activation energy were evaluated, the results shows that all films wereof n-type conductivity and activation energy increases with dispositions rate and substrate temperaturefilms prepared at 0.8 nm/s with 425 K and 1.2 nm/s with Ts (425 ,475 ) K , except that they wereof p-type conductivity .