Measurement of rise time and respectively spectral for detector fabrication experimentally

Abstract

In this work thin film (PbS) will be preparation by the thermal vacuum evaporation technique and study the properties to fabrication photoconductive detector. We found the thin film is polycrystalline and absorption coefficients increased with wave length decrease from cut off wave length .The absorption coefficient increased when incident photon energy (0.42eV). Ether wais the current increased with incident light Some of important parameters must be study are spectral response and rise time for the detector which fabricate experimentally. We found the intensity spectral response at (2.3µm). Also has been study the relation between the rise time and temperature. The results illustrated the rise time increased with decrease temperature.