Effect of Transition Metal Dopant on the Electrical Properties of ZnO-TiO2 Films Prepared by PLD Technique

Abstract

In this work, the influence of group nano transition metal oxides such as MnO2, Fe2O3 and CuO on the electrical properties of ZnO-TiO2 thin films has been studied. The prepared films were deposited on glass substrate by laser Nd-YAG with wavelength 1064 nm, energy of 800 mJ and constant number of shots 400. The thickness of the film was 200 nm at room temperature and annealing temperature (573K). The electrical properties such as DC conductivity and Hall Effect were obtained. The results of DC conductivity showed that the high activation energies occurs when doping with MnO2 corresponding to the lower values of DC conductivity (σRT). After annealing the films to 573 K the activation energy increased while the DC conductivity decreased for all metal oxides doping. Hall effect measurement showed films have either n-type or p-type conductivity depending on the type of the metal dopant.