Effect of Thermal Annealing on Photoluminescence Characteristics of Titanium Dioxide Thin Films Doped with Copper Oxide by Pulsed-Laser Deposition

Abstract

In this work, titanium dioxide thin films were deposited on glass substrates and doped with copper oxide at different concentrations (0.0, 0.05, 0.1, 0.15 and 0.2 wt.%) by pulsed-laser deposition technique followed by thermal annealing at different temperatures (423 and 523 K) to study the effects of annealing temperature on their photoluminescence characteristics. The results of photoluminescence emission showed that there are two peaks positioned at 320 and 400 nm for predominated peak and at 620 and 680 nm for the small peaks. It was found that the energy band gap of the prepared samples was decreasing with increasing the content of copper oxide dopants in titanium dioxide thin films regardless the value of annealing temperature.