Characterization of Indium Nitride Thin Films Prepared by Plasma-Assisted Molecular Beam Epitaxy


The growth and electronic structure of indium nitride has been presented. Indium nitride thin films were grown by plasma-assisted molecular beam epitaxy (PAMBE). The significance of the relative fluxes, substrate temperature and buffer layers was explored and related to the electrical and structural properties of the prepared films. Alongside the effect of active nitrogen species on indium nitride films, it was found that excited molecular nitrogen was preferred for growth over atomic and ionic species. An optimized recipe for indium nitride was developed incorporating all explored parameters.