Light-Induced Etching of Silicon


In this work, an ordinary light is used for photo-chemical etching of n-typesilicon wafer in HF solution. Scanning electron microscopy is used to monitorchanges in surface morphology produced during the etching process. Uniformporous layer has been observed for various irradiation time. Our techniqueoffers a great controlling parameter on the porous layer uniformity comparedwith the porous layer achieved by using a laser beam. Electrical propertiesand porous layer thickness of the photo produced layer have been studied.