Morphological Aspects of Oxidized Porous Silicon Prepared by Photo Electrochemical Etching


This paper reports morphological properties of porous silicon and oxidizedporous silicon, prepared by photo electrochemical etching from n-type silicon wafers asa function of experimental parameters. Scanning electron microscopic (SEM)Observations of porous silicon layers were obtained before and after rapid thermaloxidation process under different preparation and oxidation conditions .The surfacemorphology, Pore diameter, wall thickness, pore shape and porosity values were,studied based on microstructure analyses of (SEM) images.