The Optical and Electrical Properties of CdSe Thin Films Prepared by CBD Technique


In this work thin films of CdSe were deposited on glass substrate by chemical bath deposition technique at different deposition temperatures 298, 318, and 328 K. The effects of deposition temperature on the optical properties have been studied as well as the effect of annealing at different temperatures (373, 473, 573 and 673 K) for one hour. The optical properties of CdSe were studied from transmittance measurements as a function of a range of wave lengths (320-1000 nm). Optical band gap has been decreased from 2 to 1.7 eV after annealing. CdSe/p-Si was prepared by depositing CdSe film on the p-type Si substrate. The I-V characteristics showed a diode behavior.