RAPID THERMAL ANNEALING OF SILICON SOLAR CELL USING INCOHERENT LIGHT SOURCE

Abstract

The rapid thermal annealing (RTA) of single crystal silicon solar cell using the radiation from a halogen lamp has been demonstrated. The electrical properties under dark and illumination conditions followed by RTA are presented. The maximum conversion efficiency and filling factor obtained after 600oC/20S RTA were 13% and 0.7 respectively.