Abstract
The rapid thermal annealing (RTA) of single crystal silicon solar cell using the radiation from a halogen lamp has been demonstrated. The electrical properties under dark and illumination conditions followed by RTA are presented. The maximum conversion efficiency and filling factor obtained after 600oC/20S RTA were 13% and 0.7 respectively.
The article was added to IASJ on 2012-05-30
497 Total full text downloads since the date of addition
Year |
Total |
Jan |
Feb |
Mar |
Apr |
May |
Jun |
Jul |
Aug |
Sep |
Oct |
Nov |
Dec |
2024 |
1 |
|
1 |
|
|
|
|
|
|
|
|
|
|
2023 |
10 |
3 |
|
|
1 |
|
1 |
1 |
|
|
1 |
|
3 |
2022 |
32 |
6 |
1 |
3 |
2 |
4 |
3 |
5 |
3 |
1 |
2 |
2 |
|
2021 |
36 |
2 |
6 |
|
|
4 |
19 |
2 |
|
|
2 |
|
1 |
2020 |
25 |
3 |
|
1 |
3 |
|
5 |
1 |
3 |
3 |
|
4 |
2 |
2019 |
19 |
1 |
|
2 |
2 |
2 |
4 |
3 |
1 |
1 |
1 |
1 |
1 |
2018 |
38 |
14 |
9 |
|
|
2 |
4 |
2 |
|
2 |
2 |
1 |
2 |
2017 |
34 |
1 |
2 |
|
3 |
3 |
4 |
1 |
2 |
|
1 |
3 |
14 |
2016 |
26 |
1 |
|
4 |
5 |
2 |
3 |
|
5 |
2 |
1 |
2 |
1 |
2015 |
77 |
3 |
16 |
28 |
7 |
4 |
6 |
1 |
2 |
2 |
4 |
2 |
2 |
2014 |
93 |
5 |
1 |
3 |
3 |
2 |
4 |
1 |
2 |
8 |
28 |
25 |
11 |
2013 |
55 |
9 |
8 |
8 |
2 |
2 |
1 |
8 |
3 |
2 |
6 |
3 |
3 |
2012 |
51 |
|
|
|
|
|
|
6 |
12 |
6 |
|
18 |
9 |
Usage is updated on a monthly basis.