The Effects of Rapid Thermal Annealing on Photoluminescence Properties of Nanostructures Silicon


The photoluminescence spectrums (PL) of as-prepared and rapid thermal annealing RTA of nanostructures silicon have been investigated. p-Type porous silicon (psi) fabricated by electrochemical etching method .The (PL) of as-prepared sample, showed top of photoluminescence (PL) peak centered at about 540.9 nm. After the annealing process of nanostructures silicon in temperature 450°c, 600°c and 750°c at annealing time 15 sec, the (PL) peaks shifted,to 743.99nm, 747.49nm and 757.37 nm rspectively . The intensity of( PL) of annealed samples also shown a conspicuous decrease in intensity Compare with as-prepared sample .The intensity reach to (50%),(39%) and (29%)from its intial value whenthe temperature increase 450, 600°c and 750°c rspectively. This behavour is due to the increase in the average skeleton size