Study the Effect of annealing temperature on the Structure ofa-Se and Electrical Properties of a-Se/c-Si Heterojunction

Abstract

In this work Study effect of annealing temperature on the Structure of a-Se and electrical properties of a-Se/c-Si hetrojunction have been studied.The hetrojunction fabricated by deposition of a-Se film on c-Si using thermal evaporation.
Electrical properties of a-Se/ c-Si heterojunction include I-V characteristics, in dark at different annealing temperature and C-V characteristics are considered in the present work.
C-V characteristics suggested that the fabricated diode was abrupt type, built in potential determined by extrapolation from 1/C2-V curve. The built - in potential (Vbi) for the Se/ Si System was found to be increase from 1.21 to 1.62eV with increasing of annealing temperature