Abstract
In the present work, the energy band diagram of p-PbTe/n-Si heterojunctions made by thermal evaporation of a polycrystalline PbTe layer deposited on a monocrystalline Silicon substrate is constructed. Based on I-V and C-V measurements, the band offsets ΔEC and ΔEV are found experimentally to be 270mV and 610mV respectively at 300K.
The article was added to IASJ on 2012-10-31
380 Total full text downloads since the date of addition
| Year |
Total |
Jan |
Feb |
Mar |
Apr |
May |
Jun |
Jul |
Aug |
Sep |
Oct |
Nov |
Dec |
| 2024 |
14 |
|
|
1 |
1 |
1 |
4 |
3 |
2 |
2 |
|
|
|
| 2023 |
19 |
2 |
|
|
1 |
1 |
1 |
|
3 |
1 |
5 |
4 |
1 |
| 2022 |
37 |
5 |
2 |
3 |
2 |
3 |
3 |
6 |
6 |
3 |
1 |
2 |
1 |
| 2021 |
40 |
3 |
6 |
2 |
1 |
4 |
13 |
2 |
1 |
4 |
2 |
1 |
1 |
| 2020 |
30 |
3 |
4 |
1 |
3 |
2 |
1 |
7 |
|
4 |
1 |
3 |
1 |
| 2019 |
17 |
1 |
|
|
|
2 |
1 |
1 |
2 |
1 |
3 |
|
6 |
| 2018 |
14 |
3 |
|
|
|
|
2 |
|
1 |
|
3 |
4 |
1 |
| 2017 |
15 |
|
1 |
|
2 |
1 |
|
2 |
1 |
1 |
2 |
|
5 |
| 2016 |
17 |
1 |
|
1 |
|
1 |
2 |
3 |
3 |
3 |
1 |
|
2 |
| 2015 |
42 |
4 |
8 |
5 |
4 |
2 |
4 |
3 |
1 |
4 |
5 |
2 |
|
| 2014 |
81 |
2 |
8 |
5 |
8 |
4 |
4 |
6 |
2 |
11 |
8 |
4 |
19 |
| 2013 |
44 |
5 |
3 |
|
3 |
1 |
2 |
3 |
6 |
2 |
8 |
5 |
6 |
| 2012 |
10 |
|
|
|
|
|
|
|
|
|
|
3 |
7 |
Usage is updated on a monthly basis.
