Annealing Effect on the Photoluminescence of CdTe/CdSe Thin Film Photovoltaic Devices


The depth dependence of photoluminescence from as grown and CdCl2 treated polycrystalline CdSe/CdTe solar cells has been compared using a bevel etch technique. It has been found that the three emission bands observed at 1.59eV, 1.55eV and 1.45eV all became more intense after the treatment, with the emission at 1.55eV near the CdSe/CdTe interface being the most affected.