Temperature Dependency of Hall Coefficients in Cadmium Oxide Thin Films Prepared by Thermal Evaporation Technique

H.M. Mikhlif; A.M. Raouf; A.D. Nusaif

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Temperature Dependency of Hall Coefficients in Cadmium Oxide Thin Films Prepared by Thermal Evaporation Technique

H.M. Mikhlif, A.M. Raouf, A.D. Nusaif

Iraqi Journal of Applied Physics
2009, Volume 5, Issue 4, Pages 27-30

Abstract

In this work, the temperature dependencies of Hall coefficients in cadmium oxide thin films prepared by thermal evaporation technique. These coefficients included temperature-dependent Hall coefficient, logarithmic Hall coefficient and Hall mobility. Results showed that the extrinsic conduction prevails in studied samples and impurity atoms introduce energy levels within the energy gap and act as donors. The activation energy of the impurities generally ranged between 0.020eV and 0.070eV. An increase of carrier mobility with temperature was observed then it decreased in higher temperature due to lattice scattering of charge carriers. The values of optical bandgap ranged between 2.90eV and 3.30eV, which is in a good agreement with the those obtained for bulk CdO:Sn samples.

Keywords

CdO films, Hall coefficients, Temperature dependency, Thermal evaporation

Year	Total	Jan	Feb	Mar	Apr	May	Jun	Jul	Aug	Sep	Oct	Nov	Dec
2023	14	1	1		1	1	1		2	1	5	1
2022	28	4	3	2	3	1	2	7	1	3		2
2021	49	3	6	7	4	9	7	4	3	1	2	2	1
2020	36	1	3		5	2	5	5	1	5	3	4	2
2019	24			3	1	2	4	2	2	3	1		6
2018	15	3					4		2		5	1
2017	14		2			1		1	2		3	1	4
2016	30		1	1		4	6	5	5	5		1	2
2015	67	15	9	7	3	2	5	11	4	6	3	1	1
2014	99	4	5	10	9	8	11	7	6	12	15	5	7
2013	87	10	7	10	7	10	1	6	10	5	12	2	7
2012	16											9	7

Temperature Dependency of Hall Coefficients in Cadmium Oxide Thin Films Prepared by Thermal Evaporation Technique

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