The Effect of Annealing on Nano-Topography of SiO2 Film

Abstract

This research studies the effect of annealing in temperature range (300 - 600)°C on nano-topography of SiO2 film. SiO2 nano film growth on Si (100) p-type substrates, by using the anodic oxidation technique using (%75H2O+%25 isopropanol) solution containing 0.1N KNO3 as supporting electrolyte and applied potential is 5 volts. The chemical analysis of the surface of SiO2 has been done by (EDAX) shows the presence of O and Si elements. (AFM) is used to study the nanotopography of SiO2 nano film. However, it has been found that all of the following characteristics, root mean square RMS surface roughness of the SiO2 film, grain area, grain volume and grain length increase with the increase of annealing temperature.