TY - JOUR ID - TI - Effect of Ga Doping Concentration on the Inter-Band Transitions of ZnO Thin Films AU - Dr. Ziad Abdulahad Toma PY - 2013 VL - 1 IS - 1 SP - 215 EP - 228 JO - Muthanna Journal of Pure Science (MJPS) مجلة المثنى للعلوم الصرفة SN - 22263284 25725181 AB - Gallium-doped ZnO (GZO) semiconductor thin films were deposited ontoglass substrates using the spray pyrolysis technique. The effect of Ga dopantconcentration on the optical properties of ZnO thin films was studied. ZnO thinfilms doped with Ga has been improved optical transmittance in the visibleregion

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