TY - JOUR ID - TI - Epitaxial and Structural Analysis of Nickel-Manganese-Gallium Films Prepared by Magnetron Sputtering AU - Ali H. Abbas AU - Jérémy Tillier AU - Daniel Bourgault AU - Laurent Carbone PY - 2018 VL - 14 IS - 4 SP - 13 EP - 18 JO - Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية SN - 18132065 23091673 AB - In order to obtain Ni-Mn-Ga epitaxial films crystallized in martensite structures showing magnetic-induced rearrangement of martensite variants, a fine control of the composition is required. Here we present how the co-sputtering process might be helpful in the development of Ni-Mn-Ga epitaxial films. A batch of epitaxial Ni-Mn-Ga films deposited by co-sputtering of a Ni-Mn-Ga ternary target and a pure manganese target has been studied. The co-sputtering process allows a precise control of the film compositions and enables keeping the epitaxial growth of Ni-Mn-Ga austenite during deposition at high temperature. It gives rise to tune the content of the MIR-active 14-modulated martensite in the film at room temperature, as well as micro and macro-twinned domains sizes.

ER -