@Article{, title={Theoretical Study of Dopant impurities Diffusion in Multi-quantum Well Heterostructure}, author={Mohammad. H. Khalaf and Fatima. H. Saeed}, journal={Journal of Basrah Researches (Sciences) مجلة ابحاث البصرة ( العلميات)}, volume={46}, number={2}, pages={17-28}, year={2020}, abstract={The thermal diffusion of dopant impurity in multi-quantum-well heterostructures can be modeled with the second Fick’s law equation by using temperature dependent diffusion coefficient and equilibrium segregation coefficient at the interface between the layers of the heterostructures. The model adopted analytical methods by using the Laplace transform technique to solve the diffusion equation in different circumstances. The model has applied to practical structures such as InGaAs/InP detectors and InP/〖In〗_0.53 〖Ga〗_0.47 As/InP transistor. The results encourage to improvement the model to accommodate the complex types of heterostructure devices. The model may be a useful reference for a laboratory process controlling the dopant diffusion in multi-quantum-well heterostructures devices after future development.

} }