TY - JOUR ID - TI - Effect of Operation Temperature on Characteristics of NiO-Doped Tellurium Oxide Thin Film Gas Sensors Prepared by Pulsed-Laser Deposition AU - Fatima A. Ahmed PY - 2021 VL - 17 IS - 4 SP - 3 EP - 8 JO - Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية SN - 18132065 23091673 AB - The influence of doping level of tellurium oxide films with different amounts of NiO additives (5, 10, 15 and 20%) on structural, optical, and electrical properties is investigated. The films were prepared by pulsed-laser deposition method. The Hall effect measurements show an increase in the conductivity with increase the NiO ratio and transfer the type of charge carriers from n to p-type with 20% NiO. The H2S sensing properties are influenced by the NiO ratio in the TeO films as well as the operation temperature. The TeO sensor loaded with 10% NiO is extremely sensitive to H2S and the best operation temperature is 50°C, and exhibits fast response speed of 7 s and recovery time of 20 s for trace level (10 ppm) H2S gas detection.

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