TY - JOUR ID - TI - Preparation and Characterization of Porous Silicon for Photodetector Applications AU - Shahad S. Khudiar AU - Uday M. Nayef AU - Falah A. Mutlak PY - 2022 VL - 2 IS - 2 SP - 64 EP - 69 JO - Journal of Applied Sciences and Nanotechnology مجلة العلوم التطبيقية والنانوتكنولوجي SN - 27886867 AB - Photoelectrochemical etching (PECE) was used to prepare porous silicon (PS) layers of polished surfaces of (100) n-type silicon wafers with a resistance of 0.1-100 μm and thickness of 600 ± 25 μm. The directed slices are to be catalyzed at different etching times (5, 15, 25 min) with a constant Hydrofluoric acid of 20% and with a fixed current density of 20 mA/cm². The porous silicon morphology was investigated using scanning electron microscopy (SEM). Samples were formed by different engraving times. It revealed that the silicon surface has a layer of sponge-like structure, with the average pore diameter (740±1 nm, 550±2 nm,460±3 nm) of the porous silicon increasing as the etching time increased. PS Al PS /Si /Al photodetectors were found to work as a photodetector over a wide wavelength responsivity.

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