@Article{, title={Comparative Study of Gamma and Beta Rays Exposure Effects on Manganese Sulphide Thin Films for Solar Cell Applications}, author={Rawaa E. Mohammed, Issam M. Ibrahim, Akram M. Ali}, journal={Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية}, volume={19}, number={1}, pages={21-28}, year={2023}, abstract={Ionization-radiation such as charged particles and gamma radiation highly affects the properties of semiconductors' thin films by different mechanisms including the ionization process, and crystal-defect formation. In this work, the effect of beta and gamma radiations on the properties of deposited MnS thin films by spray pyrolysis, and the effect of defect formation on the current-voltage characteristic of the MnS/Si heterojunction for solar cells application were studied. The prepared thin films were examined by XRD, FE-SEM, and UV absorbance before and after exposure to a pure beta source (Sr-90) and gamma source (Co-60). The results show highly effect of the gamma exposure compared with the beta radiation on the structural properties by reducing crystallinity. The surface morphology and optical properties are highly affected by the two radiations. The photovoltaic properties of Mn/Si heterojunction enhanced with limited exposure time of beta radiation despite the structural changes which may be due to the increase of the charge carriers generated, while low enhancement by gamma radiation.

} }