TY - JOUR ID - TI - Effect of the Direct Current Modulation on the Relaxation Oscillation and Turn-on Delay for a QWL In0.2Ga0.8As/GaAs AU - Nabiel M. Naser AU - Saman Q. Mawlud AU - Mazin S. Othman PY - 2011 VL - IS - 6 SP - 478 EP - 488 JO - Journal of College of Education مجلة كلية التربية SN - 18130380 AB - In this paper the basic physical aspects of laser diodemodulation and the operating principles of the lasermodulation were described. The direct modulationcharacteristics of a quantum well laser diode (QWL)In0.2Ga0.8As/GaAs is investigated theoretically using computerprogram to simulate the optical output of a semiconductorlaser subjected to current modulation. The specific laser deviceoutput characteristics for threshold current of 8.25 mA and theslope efficiency 1.13 W/A were obtained. The effect of the DCcurrent on the turn-on delay and the relaxation oscillationfrequency as a function of the DC current for a variablenumber of biasing bits were studied, it was obtained that therelaxation oscillation reaches a GHz region and the turn-ondelay will limited between 0-1nsec.

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