@Article{, title={Junction Characteristics of Wide-Emitter (p)CdS-(n)Si-(p)Si Heterojunction Transistor}, author={R.A. Ismail and J.T. Jabbar and O.A.S. Abdulrazaq}, journal={Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية}, volume={2}, number={1-2}, pages={3-5}, year={2006}, abstract={Fabrication and characterization of feasible heterojunction bipolartransistor (HBT) made by depositing of p-type CdS film on monocrystallinesilicon homojunction were demonstrated. The ideality factors (n) of emitterbaseand base-collector abrupt junctions were 1.6 and 1.8 respectively. Thetransistor exhibited current gain dc as high as 360.

} }