TY - JOUR ID - TI - Characteristics of a-Si:H Solar Cell Under Extended Illumination Condition Using NIR Laser AU - S.F.A. Ali AU - E.A.F. Ali AU - S.H. Al Shaikh Hussin AU - F.M.M. Aasy PY - 2009 VL - 5 IS - 1 SP - 41 EP - 44 JO - Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية SN - 18132065 23091673 AB - In this work, characteristics of a-Si:H solar cell under extendedillumination condition, using an NIR laser diode, were studied. Thesecharacteristics were introduced by calculations of recombination rate,open-circuit voltage and defect growth rate as functions of illuminationtime. Stabilized open-circuit voltage of 0.04V and photogeneration rateof ~2x1021cm-3 were observed. We present measurements on the declineof the open-circuit voltage VOC in a-Si:H solar cells during extendedillumination (light-soaking). We used a near-infrared laser that wasnearly uniformly absorbed in the intrinsic layer of the cell. At thehighest photogeneration rate (about 2x1021cm-3), a noticeable decline(0.01V) occurred within about 10 minutes; VOC stabilized at 0.04Vbelow its initial value after about 200 hours. We found that both thekinetics and the magnitudes of VOC are reasonably consistent with thepredictions of a calculation combining a bandtail+defect picture forrecombination and a hydrogen-collision model for defect generation.

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