@Article{, title={Fabrication and Characterization of InZnO TFTs Grown on Transparent Conductive Oxide Substrate by DC Sputtering Technique}, author={M.N. Hussain and J.M. Abdul-Jabbar}, journal={Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية}, volume={6}, number={1}, pages={41-46}, year={2010}, abstract={In this work, depletion-mode transistors were made of InZnO thin films prepared and grown on transparent conductive substrates by DC sputtering technique. The SiO2-In2O3-ZnO system and N2 plasma incorporated InZnO film were grown to get a better controllability of the carrier concentration during the film growth. Hydrogen plasma and oxygen plasma effects on the TCO films and the TFTs were investigated. Devices were simulated in a device model to extract the parasitic parameters. The depletion-mode TFTs have been fabricated successfully on glass by using InZnO films as the channel layers.

} }