TY - JOUR ID - TI - Fabrication and Characterization of InZnO TFTs Grown on Transparent Conductive Oxide Substrate by DC Sputtering Technique AU - M.N. Hussain AU - J.M. Abdul-Jabbar PY - 2010 VL - 6 IS - 1 SP - 41 EP - 46 JO - Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية SN - 18132065 23091673 AB - In this work, depletion-mode transistors were made of InZnO thin films prepared and grown on transparent conductive substrates by DC sputtering technique. The SiO2-In2O3-ZnO system and N2 plasma incorporated InZnO film were grown to get a better controllability of the carrier concentration during the film growth. Hydrogen plasma and oxygen plasma effects on the TCO films and the TFTs were investigated. Devices were simulated in a device model to extract the parasitic parameters. The depletion-mode TFTs have been fabricated successfully on glass by using InZnO films as the channel layers.

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