@Article{, title={EFFECTE OF THERMAL ANNEALINEG ON THE ELECTRCAL PROPERTIES OF PbS/Si HETEROJUNCTION EFFECTE OF THERMAL ANNEALINEG ON THE ELECTRCAL PROPERTIES OF PbS/Si HETEROJUNCTION}, author={ZUHAIR H. JAWAD زهير ح جواد}, journal={Journal of Kufa - physics مجلة الكوفة للفيزياء}, volume={2}, number={2 English}, pages={42-47}, year={2010}, abstract={In this research the electrical properties for heterojunction devices have been improved by process of simple annealing temperature about one hour period. The results have been explained that the influential of analysis process on electrical properties during the clearest improve for devices properties at special temperature .

In this research the electrical properties for heterojunction devices have been improved by process of simple annealing temperature about one hour period. The results have been explained that the influential of analysis process on electrical properties during the clearest improve for devices properties at special temperature .} }