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In this paper, the fundamental harmonic of a Nd:YAG laser (Q-switched 1064nm wavelength, 1 Hz repetition rate and 9 ns pulse duration) has been used for the ablation of cadmium samples in air at atmospheric pressure and the generation of the cadmium plasma. The experimentally observed lines of cadmium plasma emission have been used to calculate the plasma parameters such as (electron temperature (Te), electron density (ne), Debye length (λD) and plasma frequency (ωp)). Line pair ratio of neutral species have been used for the electron temperature and electron density measurements. Plasma parameters were studied as a functions of laser pulse energy.

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The present work intends to study of dc glow discharge were generated between pin (cathode) and a plate (anode) in Ar gas is performed using COMSOL were used to study electric field distribution along the axis of the discharge and also the distribution of electron density and electron temperature at constant pressure (P=0.03mbar) and inter electrode distance (d=4 cm) at different applied voltage for both pin cathode system and plate anode and comparison with experimental results.

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The thin films of CdS deposited on silicon wafers substrate by ) dc planar magnetron sputtering techniques) . and they are study photovoltaic characteristics of (n-CdS/p-Si) Heterojunction, then we found type of heterojunction is abrupt type , also we calculated built-in potential (Vbi) at (400 kHz) and for thickness (100,200 and 300) nm for different temperatures (303,373 and 473) K and study the variation junction capacitance with bias voltage, variation voltage with reciprocal of square capacitance , and the width of depletion layer can be calculated and study of the variation of electrical conductivity as a function of temperature for different thicknesses , it is clear from this study that the conductivity for all deposited films increases with thickness, and increases with temperature . Also its observed that the conductivity of the films decreases with increasing of annealing temperatures and we found there are tow activation energy can be calculated in this study.

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In this work, tin doped copper oxide films have been manufactured by PLD. The films were examined by UV-VIS-NIR spectrophotometer, X-ray diffraction and their thickness by utilizing optical interferometer technique. Pulsed Nd:YAG laser was used for arranging CuO0.9:Sn0.1 on a glass substrate with varying number of laser pulses at a substrate temperature (673K). The optical properties of as-grown film, for example, optical transmittance, absorption coefficient, refractive index, extinction coefficient and energy gap have been measured tentatively and the influences of a number of laser pulses on it were studied. An inverse relationship between energy gap and the number of laser pulses was observed.

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The work done in this paper to study properties for nitrogen plasma generated by method electrical discharge when the aluminum was a target. Experimental study on the effect electrodes material, applied voltages on spectroscopic parameter for DC discharge plasma in Nitrogen gas using planner electrodes were done. The electron temperature, increase with increasing applied voltage from (700 to 1100) V. While the plasma density, calculate by Stark broadening effect, which increase with it. The peaks intensities for N2 transition (λ= 336.6 nm and 391.4 nm) increase with increasing applied voltage. The vibrational energy (TVib) for N2 molecular increase from 0.165 to 0.185 eV with increasing applied voltage from (700 to 1100) V, which less than the calculated electron temperature.

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In this Research, (In2O3: CdO) films were prepared using pulsed laser deposition (PLD) method on glass substrate at room temperature deposited at laser influence 500mJ/cm2with different shoots N= (200,300,400,500and600). the structural, and the optical properties and the films are studied with different annealing temperatures (523and 623) K. Optical measurements and the films were analyzed by UV-VIS absorption spectra. The structural properties of samples were investigated by x-ray diffraction patterns of the films and show that the films and polycrystalline Structure with all shoots. Transmittance spectrum found is equal to 93.17%, refractive index range is 1.635 and energy gap range is 2.75-3.15ev.

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Non-thermal argon plasma needle at atmospheric pressure was constructed. The experimental setup was based on a simple and low cost electric component that generates a sufficiently high electric field at the electrodes to ionize the argon gas which flow at atmospheric pressure. A high AC power supply was used with 1.1 kV and 19.57 kHz. Non-thermal Argon plasma used on blood samples to show the ability of non-thermal plasma to promote blood coagulation. Three tests have been done to show the ability of plasma to coagulate both normal and anti-coagulant blood.Each blood sample has been treated for varying time from 20sec. to 180sec. at different distances. The results of the current study showed that the cold plasma produced from argon significantly increase the in vitro speed of blood coagulation, the plasma increases activation and aggregation of platelets, causes proliferation of fibroblasts and fibrin production accelerates blood coagulation.

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In this work the parameters of plasma (electron temperature Te, electron density ne, electron velocity and ion velocity) have been studied by using the spectrometer that collect the spectrum of plasma. Two cathodes were used (Si:Si) P-type and deposited on glass. In this research argon gas has been used at various values of pressures (0.5, 0.4, 0.3, and 0.2 torr) with constant deposition time 4hrs. The results of electron temperature were (31596.19, 31099.77, 26020.14 and 25372.64) kelvin, and electron density (7.60*1016, 8.16*1016, 6.82*1016 and 7.11*1016) m-3. Optical properties of Si were determined through the optical transmission method using ultraviolet visible spectrophotometer with in the range(300 – 1100) nm.

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Simulation ofdirect current (DC) discharge plasma using COMSOL Multiphysicssoftware were used to study the uniformity of deposition on anode from DC discharge sputteringusing ring and disc cathodes, then applied it experimentally to make comparison between film thickness distribution with simulation results. Both simulation and experimental results shows that the deposition using copper ring cathode is more uniformity than disc cathode.

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CdO:NiO/Si solar cell film was fabricated via deposition of CdO:NiO in different concentrations 1%, 3%, and 5% for NiO thin films in R.T and 723K, on n-type silicon substrate with approximately 200 nm thickness using pulse laser deposition. CdO:NiO/n-Si solar cell photovoltaic properties were examined under 60 mW/cm2 intensity illumination. The highest efficiency of the solar cell is 2.4% when the NiO concentration is 0.05 at 723K.

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