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Thin films of cuprous oxide Cu2O have been prepared using spraypyrolsis technique. Experimentally, the optical energy gap of Cu2O wasabout 2.2eV. To achieve and estimate an accurate Eg value, there wasproblem in the selection of exact tangent point. To overcome thisproblem, Newton-Raphson method and mean-value theorem were used.It was found that the mean-value theorem can predict correlated nearlysatisfactory Eg value than the other method.

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Undoped and Co-doped zinc oxide (CZO) thin films have been prepared by spray pyrolysis technique using solution of zinc acetate and cobalt chloride. The effect of Co dopants on structural and optical properties has been investigated. The films were found to exhibit maximum transmittance (~90%) and low absorbance. The structural properties of the deposited films were examined by x-ray diffraction (XRD). These films, deposited on glass substrates at (400ْ C), have a polycrystalline texture with a wurtzite hexagonal structure, and the grain size was decreased with increasing Co concentration, and no change was observed in lattice constants while the optical band gap decreased from (3.18-3.02) eV for direct allowed transition. Other parameters such as Texture Coefficient (Tc), dislocation density (δ) and number of crystals (M) were also calculated .

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Thin films of SnOz and SnOz:F have been prepared using SnCl2.2HzOwith a new preparation conditions utilizing chernical spray-pyrolysis. 'lhe struciuril and optical properties have been studied for the asdeposited thin films before and after irradiation by gamma rays.Bv XRD technique, it was found that the structuiebf the as deposited thinfihirs was polycrystalline, different peaks corresponds to (101), (200)'(211), with'a freferred orientation along (110) difection, the exposure ofihe as cieposlt6d ntms to a selected dosebf gamma rays, seems to decrease ittheintensity of these peaks and increase the full width at half maximawhich leadi to an incrdasc in the average of grain size.Surface toDoeraDhv for the as depo-sited-films werc studied using a,iiioriopl,'ii-*u', iound that radiation increase the structural delect andhence deireasc thc degree of crystallinir.v.

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