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Reliability, Globalization, Industrial engineering, Quality, Performance, Management, Benchmarking, efficiencies, effectiveness.

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instructional, design, theory, constructivism, efficiencies

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Electro wining of metals, Economic grounds, Carbon reduction of the oxide, Electrolytic reduction, Cathodic reaction, Current efficiencies

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water consumption use, partial root zone irrigation PRD, water use efficiencies, water productivity, Sorghum, gypsiferous soil.

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Single-Metal-semiconductor-metal, Photodetectors, Al0.08In0.08Ga0.84N, PA-MBE, SBH, QE, NEPAbstractMetal-semiconductor-metal, MSM photodetectors, PDs based on gold and silver, Au, Ag/Al0.08In0.08Ga0.84N, commercial sample/, Au, Ag have been fabricated and characterized. The effect of annealing temperature of As deposit, 400, 500, and 600 0C for 30 min on the topography and electrical properties of Au contact on Al0.08In0.08Ga0.84N thin film have been characterized and optimized using Current-Voltage, I-V characteristic. Schottky barrier height, SBH and ideality factor, n of Au/ Al0.08In0.08Ga0.84N interface were 1.223 eV and 1.773 at 50 0C annealing temperature for 30 min respectively, andit is found that contact hasa high-quality surface. Also, with the same procedure, the effect of annealing time of 15, 30, 45 minutes, and 1 hour have been studied and optimized. The results revealed that the best annealing time is 30 min which hasthe highest SBH. Au contact compared with Ag contact used to first time as best our knowledge with the optimal condition to select the best metal for MSM photodetectors, PDs. The ideal characterization of Au, Ag/AlInGaN/Au, Ag MSMPDs on Si substrate depend on responsivities of 0.201 and 0.153 A W-1, quantum efficiencies of 71% and 57%, and NEPs of 3.55×10-4 and 1.45×10-3W-1, respectively have been also studied compared. The height SBH and QE for thesamples grown on Si was at Au contact which proposed to use in such optoelectronic devices.IntroductionAlthough GaN hasmany advantages in many optoelectronic devices application however Quaternary, AlInGaN thin films consider as promising material and itattracted much research interest because theyallow almost independent control of the lattice mismatch and band off stein AlInGaN-based heterostructures. it has an attractive topic to be used in many applicationsfor any scientific research, such as optoelectronic devices operatein a wide range of the electromagnetic spectrum. it is a benefit due to the high-quality structures and strong ultraviolet emission at RT, it also allows more freedom and independent control regarding energy gap and latticesconstant [1, 2].Metal-semiconductor-metal, MSM has been suggested in this work because of its performance. It isformed from two schottky contacts like fingers that deposit on the top of the surface as shown in Figure, 1 [3].

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