Structural & Electrical Properties of CdTe/Si Heterojunction Prepared by Flash Evaporation Technique

Raad, K. Hassan --- Emad, H. Alwan --- Maqadcy, M. B.

journal of the college of basic education مجلة كلية التربية الاساسية
ISSN: 18157467(print) 27068536(online) Year: 2010 Volume: 15 Issue: 63 Pages: 61-68
Publisher: Al-Mustansyriah University الجامعة المستنصرية


The present study is on the optoelectronic properties of CdTe/Si heterojunction photodetector made by deposition of CdTe by flash evaporation technique on clean monocrystalline phase of Si. Electrical and structural properties of grown CdTe film were investigated. The CdTe/Si junction exhibits fair diode rectification and the soft breakdown occurred at VB>2 V. Dark I–V characteristics of the CdTe/Si photodetector are examined at room temperature.