Analysis and Simulation of Carrier Transport in InP-Based Double Heterojunction Photoelectronic Device

Cheng Zeng Li

Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية
ISSN: 18132065 23091673 Year: 2017 Volume: 13 Issue: 3 Pages: 23-28
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة


In this study, the carrier transport in InGaAs/InP double heterojunction (DHs) devices was simulated and analysed by Monte Carlo modelling. It was shown that direct modifications to the definitions of common emitter gain and base transit time r-establish the first order validity of simple analytical models of phototransistor performance based on carrier diffusion. The available evidence indicates that the correction is small, even in very narrow bases, if the base doping is high (NB ~51019 impurities/cm3). Although the corrections to the base and c-b depletion layer transit times are large, the impact on estimates of ft by simple theory is small owing to the dominance of RC time constants.


Heterojunction --- Phototransistors --- Indium phosphide --- Carrier transport