Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films

Duaa A. Mohammed --- Muslim F. Jawad

Engineering and Technology Journal مجلة الهندسة والتكنولوجيا
ISSN: 16816900 24120758 Year: 2018 Volume: 36 Issue: 2 Part (B) Engineering Pages: 124-127
Publisher: University of Technology الجامعة التكنولوجية


In this study, In2O3 thin films were deposited on quartz substrates bypulsed laser deposition technique at room temperature and followed bythermally annealing at 300℃, 400℃ and 500℃ for 1 hour. The optical bandgap was found to increase with the annealing temperature from 3.5 to 3.85 eVand the transmittance was observed above 90%. XRD results show that the filmsare polycrystalline in nature and crystallizes with preferred orientation (222).SEM images show that the films are high homogenous and they containeduniformly distributed small grains.


PLD --- In2O3 thin films --- SEM --- morphological properties