Effect of Annealing on the Electrical Characteristics of CdO-Si Heterostructure Produced by Plasma-Induced Bonding Technique

Abstract

In this work, the effect of annealing on the electrical characteristics of the CdO-Si heterojunction produced by plasma-induced bonding technique was studied. The heterojunction was consisting of n-type CdO on a p-type silicon substrate. Results showed reasonable improvement in the electrical characteristics of this heterojunction within a range of annealing temperatures, above which the heterojunction showed degradation in its characteristics. This work produces CdO-Si of much better characteristics than same heterojunctions produced by thermal evaporation technique.