STUDY THE EFFECT OF SUBSTRATE TEMPERATURE ON THE ELECTRICAL PROPERTIES OF THIN FILM CUGAS2 COMPOUND

Abstract

In the Present study , CuGaS2 alloys have been Prepared by mixing stochiometric weight of Cu, Ga and S , then melting them under vacuum of about ( 3 × 10-2 mbar) in a sealed quartz ampoule. The thin films have been prepared by depositing the alloy on soda glass substrate , heated at different temperatures and using the thermal evaporated technique under pressure of about (3 × 10-6 mbar ). The electrical conductivity , was characterized by two activation energies in the temperature range {(-120 °C) to 25 °C}. The maximum room temperature conductivity was ( 17.6 Ω-1.cm-1). From the Hall effect measurements the type of the carriers , the carrier concentration , and that Hall mobility , at room temperature , have been deduced. The films were of n- type. The maximum value of the carrier concentration were (9.1 × 10 18 cm-3 ) for films prepared at (150 °C) and the minimum value were (1.65 × 10 18 cm-3) for films prepared at (350 °C) , while the Hall mobility had maximum value (36.45cm2/v.sec) for films prepared at (150 °C) and the minimum value was (6.08 cm2/v.sec) for films prepared at (350 °C).