A Theoretical Study of Charge Transport y atAu/ ZnSe and Au/ZnSInterfaces Devices

Abstract

A quantum mechanical description of the dynamics of non-adiabatic electron transfer in metal/semiconductor interfaces can be achieved using simplified models of the system. For this system we can suppose two localized quantum states donor state |D› and acceptor state |A› respectively. Expression of rate constant of electron transfer for metal/semiconductor system derived upon quantum mechanical model and perturbation theory for transition between |├ D〉 and |├ A〉 state when the coupling matrix element coefficient is smaller than0.025eV. The rate of electron transfer for Au/ ZnSe and Au/ZnS interface systemsis evaluated with orientation free energy using aMatlap program. The results of the electron transfer rate constant are calculatedfor our modeas well as with experimental results .