Physical Properties of Nanostructure Sno2 Thin Films Growth on Al2O3 Substrate by Pulsed Laser Deposition


In this paper, the synthesis of nanostructure tin oxide SnO2 thin films on (0001) sapphire substrates using a pulsed 532 nm Nd: YAG laser is presented. Deposition of films is achieved at three different substrate temperatures 300,400,500ºC. The influence of substrate temperature on the structural and optical properties of tin oxide films are discussed and analyzed. We have shown the results of x-ray diffraction that all films prepared with the installation of multi crystalline (tetragonal) and directional prevalent (101) for all modds before and after annealing. These films are highly transparent (63–79%) in visible region, and transmittance of the films depends on substrate temperature. The band gap of the films varies from 3.45 eV to 3.61 eV for various temperatures. The morphology of deposited films was characterized by scanning electron microscope (SEM) and atomic force microscope (AFM), with increasing substrate temperature, both the grain size and surface roughness increase.We have also investigated the photoluminescence (PL) emission of the simples produced by PLD. The absorption of very intense PL emission for the films at temperature T= 500 ºC. The photoluminescence (PL) spectrum of the SnO2 exhibits visible light emission with a peak at 602 nm.