STUDYING THE INFLUENCE OF FAST NEUTRONS & GAMMA-RAY ON THE ELECTRICAL CHARACTERISTICS OF PN

Abstract

In this paper the effect engenders by fast neutrons and gammarays on the electrical properties of some silicon diodes was in vestigated. Theneutron generator (T-400) was used to induce fast neutrons with energy (En=14MeV) and the standard source (60Co) was used to induce gamma ray withenergy range (1.33-1.17 MeV). The measurements of the samples includedstudying the characteristics Current–Voltage (I-V characteristics) before andafter irradiation taking into account that these samples were exposed todifferent successive periods of irradiation from the neutron source and todifferent doses of gamma rays. The results indicate that there are some changesin the properties of the samples that were exposed to fast neutrons, that is, thecurrent increases at low-levels fluency. And with the increase in the neutronfluency the current decreases, this decrease continues with the increase in theneutron fluency till it goes back to a level near to its original one. The results ofthe samples, which were exposed to gamma rays, indicate a slight change intheir properties. The current decreases with increase in the doses and thecontinuity of providing gamma doses leads to a nil current.