Frequency Dependent Capacitance –Voltage and Current Density Characteristic of Al/PS/p-Si Heterojunction

Abstract

In this paper, formation of microstructures porous silicon layer (PS) on c-Si substrate p-type with resistivity’s10 Ω.cm which was prepared by the electrochemical etching (ECE) is presented. The etching current densities (40 and 50 mA.cm-2) were used in the electrochemical etching procedure leading to the formation of 1.08 µm and 1.34µm thick porous layers respectively at constant etching time 300sec. From the current – voltage characteristics of the PS/p-Si, the potential barrier were determined and found to be (0.54 and 0.53 eV) respectively. C-V measurements performed on metal/porous silicon/crystalline silicon structures with different etching current densities and frequency depended