Organic Vapors Sensor Based on Dangling Bonds of Porous Silicon


In this paper, a porous silicon (PS) layer is investigated as a sensing materialto detect the organic vapors with low concentration. The structure of theprepared sensor consists of thin Au /PS/n-Si/Au thick where the PS is etchedphoto -chemically. The current response of the sensor is governed by thepartial depletion of silicon located between two adjacent (porousregions).This depletion is due to the charges trapped on dangling bondsassociated with the silicon – porous silicon interface .