Enhanced the response time of the P-N junction Photodetector

Abstract

In the present work, the response time of p-n junction photo-detector has been achieved by using the rapid thermalannealing (RTA) technique in which the annealing time has been ranged from (5-25) s at (773 K) the result shows a goodimprovement in the time constant of the detector and it has beast result at (15) s which reach to (26.81) ns for (905) nmwavelength of GaAlAs laser