Study Optoelectronic Properties of Ag2O Heterojunction Prepered by Thermal Oxidation Technique


Highly (101)-oriented p-Ag2O thin film with high electrical resistivilywas grown by thermal oxidation (TO) on clean monocrystalline p-type Siwithout any post- deposition annealing. From optical transmittance andabsorptance data, the direct optical band gap was found to be 1.4eV. Theelectrical and photovoltaic properties of Ag2O/Si isotope heterojunctionwere examined in the absence of any buffer layer. Ideality factor ofheterojunction was found to be 3.9. Photoresponse result revealed that thereare two peaks located at. 750 nm and 900nm .