Fabrication and Study Se/Sb on Silicon Detector Heterojunction


The optical response characteristics of Se/Sb thin film heterojunction deposited ona p-type silicon substrate were studied. Results indicated that the obtained isotypeheterojunction is linearly graded and has 0.8V built-in potential. Also, the maximumspectral responsivity and maximum quantum efficiency were obtained at the region of (600-650) nm and the detectivity was about 7.77x1010 cm.Hz 1/2.W-1. Response time of themanufactured detector was about 225ns. This work is a good attempt to manufacture theheterojunction detector from V and VI elements.