A Theoretical Investigation Of Reaction Properties In Highly- Doped N-Gaas At MIR Wavelengths

Abstract

In this work, a theoretical multi-layer structure was presented to investigate thenonlinear optical behavior induced by free electrons in a thin layer of highly-dopedn-type GaAs at the MIR wavelengths. The multi-layer structure is considered toenhance absorption by a semiconductor thin layer. The intensity-dependentreflection properties were analyzed and the results explained the possibility toincrease the optical sensitivity of the multi-layer structure compared to that inGaAs bulk.