The performance of Hydrogenated Amorphous Silicon Charge Coupled Devices

Abstract

From gas phase and by glow-discharge method Hydrogenated Amorphous Silicon Charged Coupled devices have been deposited. A detailed practical study has been carried out. The most important parameter , the transfer efficiency , was found to depend strongly upon the device gate number and the clock frequency. The best efficiency achieved was 97.7% and that was at frequency of 250 Hz.