Carrier Life Time, Time Constant, And Other Related Detector Parameter For Porous Silicon /Silicon Heterojunction Detector

Abstract

In the present work, Porous silicon constituting silicon nanostructures layerhave been produce on crystal silicon using different preparation condition in laserinduced electrical etching process. Were a (800 nm) , (1watt) semiconductor laserhas been used with the electrochemical etching process to prepare the porous layeron the surface of (111) n- type silicon substrate. Two different Silicon resistivitiesof (0.564,4.29) W.cm was employed to prepared (Ps/ Si) heterojunction at differentpreparation condition. The characteristic of the prepared device has been found todepend directly on the formation current density and substrate resistivity. Theobtained device has good parameter to work as a detector in the (V- NIR) region .