An interesting experimental observation of O2 pressure effect on the surface roughness of ZnO thin films prepared by PLD technique

Abstract

In the foregoing section, we have seen that a high quality semiconductor nanostructure can be fabricated using PLD. A relatively smooth surface and a high crystalline quality, which are appropriate for good optoelectronic devices and applications, were obtained at oxygen pressure of 5x10-2mbar. But at vacuum of 5x10-1 mbar, a very low crystalline and a rough surface were obtained. This surface characterization is important for applications in gas sensors and catalysis.